GaInNAs quantum well structures for 1.55 mm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

GaInNAs/GaAs multiple quantum well (MQW) structures for long wavelength emission were grown by atmospheric pressure metalorganic vapor phase epitaxy using trimethylgallium, trimethylindium, tertiarybutylarsine and dimethylhydrazine precursors. The dependence of the N concentration and the emission wavelength on the In concentration was investigated. The longest wavelengths were obtained with In concentrations of around 23%. Postgrowth rapid thermal annealing was performed to enhance the optical quality of the material. Low-temperature photoluminescence (PL) down to 0.77 eV (1.61 mm) was obtained from a Ga0.74In0.26N0.03As0.97 MQW structure. After annealing the PL wavelength of 1.51 mm was obtained at room temperature. r 2002 Elsevier Science B.V. All rights reserved. PACS: 81.15.Gh; 78.55. m